Magnetic Sensors
Hall Effect
Devices
Hall effect device
is one of oldest known sensors, although it has only been
available in practical form since the 1950's.The Hall
effect is named after its discoverer, physicist E.W.Hall.
Hall potential is
E=RHi/t
where E is Hall
potential in volts(V).
R is Hall constant
for material
H is magnetic
field
i is control
current
t is device
thickness
The value of E can
be different for different materials.
Flux Gate Sensors
They are basically
over driven magnetic core transformers in which
transducible event is saturation of magnetic material.
Toroidal Core
This core removes
problem of picking off small signals in presence of large
offset components. We can install pair of orthogonal pick
up cores
The transverse voltage (Hall
effect) measured in a
Hall
probe has its origin in the magnetic force on a moving
charge carrier
For many years the
Hall
effect was not used in practical applications because
the generated voltage in the gold film was extremely low |